1.Designed for 3D IC process 2.Excellent bond head design and performance 3.Flexible wafer and substrate handling function (standard load port、MCLP、EFEM…etc) 4.Data traceability and report function are available 5.Customize equipment communication function is available
1.Wafer size :12″ wafer (w/ frame) 2.Chip size: 1 mm x 1 mm ~ 29 mm x 29 mm[Option]40mm x 40mm ~ 100 mm x 100 mm 3.Chip thickness:25 um ~ 2000 um 4.Bonding accuracy <3 um 5.Bonding force 1N ~ 300 N
KB-9000
1.Bonding accuracy <3um 2.Available to fan out / PoW / PoP Process 3.Switchable flip function for face down/face up application Inspection function for die surface AOI High bonding force process ready >300N
1.Machine cycle time : 0.5sec 2.UPH : ~7K (depend on process) 3.Accuracy : < 3um 4.Bonding process : by flux, DAF, … 5.Heating : 200°C~ 6.Bonding force : 1~300N 7.Chip thickness : 30mil > t > 4mil(2mil option) 8.Chip Size : 1x1mm ~ 30x30mm 9.Bond Carrier : 12” wafer /glass 10.Flip unit : Yes (switchable)
KB-9X00
1.Designed for Fan out、2.5D/ 3D IC process 2.Excellent bond head design and performance 3.Flexible wafer and substrate handling function (standard load port、MCLP、EFEM…etc) 4.Data traceability and report function are available 5.Customize equipment communication function is available
1.Accuracy : <3 um
KB-9150
1.Designed for 3D IC process. 2.Excellent bond head design and performance. 3.Flexible wafer and substrate handling function (standard load port、MCLP、EFEM…etc) 4.Data traceability and report function are available. 5.Customize equipment communication function is available
1.Chip size:Face Down : 0.5×0.5~40x40mm [Option] 40x40mm~70x70mm 2.Chip thickness:0.1mm to 1mm 3.Accuracy: <3 um 4.Bonding force:1N~300N 5.Dipping force:1~20N 6.Wafer load/unload:EFEM/OHT/Load port 7.Glass carrier load/unload:EFEM/OHT/Load port