Die Bonder 黏晶機

KB-9300

KB-9300

1.Designed for 3D IC process
2.Excellent bond head design and performance
3.Flexible wafer and substrate handling function
(standard load port、MCLP、EFEM…etc)
4.Data traceability and report function are available
5.Customize equipment communication function is available

1.Wafer size :12″ wafer (w/ frame)
2.Chip size: 1 mm x 1 mm ~ 29 mm x 29 mm[Option]40mm x 40mm ~ 100 mm x 100 mm
3.Chip thickness:25 um ~ 2000 um
4.Bonding accuracy <3 um
5.Bonding force 1N ~ 300 N

KB-9000

KB-9000

1.Bonding accuracy <3um
2.Available to fan out / PoW / PoP Process
3.Switchable flip function for face down/face up application
Inspection function for die surface AOI
High bonding force process ready >300N

1.Machine cycle time : 0.5sec
2.UPH : ~7K (depend on process)
3.Accuracy : < 3um
4.Bonding process : by flux, DAF, …
5.Heating : 200°C~
6.Bonding force : 1~300N
7.Chip thickness : 30mil > t > 4mil(2mil option)
8.Chip Size : 1x1mm ~ 30x30mm
9.Bond Carrier : 12” wafer /glass
10.Flip unit : Yes (switchable)

KB-9X00

KB-9X00

1.Designed for Fan out、2.5D/ 3D IC process
2.Excellent bond head design and performance
3.Flexible wafer and substrate handling function (standard load port、MCLP、EFEM…etc)
4.Data traceability and report function are available
5.Customize equipment communication function is available

1.Accuracy : <3 um

KB-9150

KB-9150

1.Designed for 3D IC process.
2.Excellent bond head design and performance.
3.Flexible wafer and substrate handling function (standard load port、MCLP、EFEM…etc)
4.Data traceability and report function are available.
5.Customize equipment communication function is available

1.Chip size:Face Down : 0.5×0.5~40x40mm
[Option] 40x40mm~70x70mm
2.Chip thickness:0.1mm to 1mm
3.Accuracy: <3 um
4.Bonding force:1N~300N
5.Dipping force:1~20N
6.Wafer load/unload:EFEM/OHT/Load port
7.Glass carrier load/unload:EFEM/OHT/Load port

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